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| ?2002 fairchild semiconductor corporation rev. a, july 2002 fjv4106r pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -10 v i c collector current -100 ma p c collector power dissipation 200 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -50 v bv ceo collector-emitter breakdown voltage i c = -100 a, i b =0 -50 v i cbo collector cut-off current v cb = -40v, i e =0 -0.1 a h fe dc current gain v ce = -5v, i c = -5ma 68 v ce (sat) collector-emitter saturation voltage i c = -10ma, i b = -0.5ma -0.3 v c ob output capacitance v cb = -10v, i e =0 f=1.0mhz 5.5 pf f t current gain bandwidth product v ce = -10v, i c = -5ma 200 mhz v i (off) input off voltage v ce = -5v, i c = -100 a-0.3 v v i (on) input on voltage v ce = -0.3v, i c = -1ma -1.4 v r 1 input resistor 7 10 13 k ? r 1 /r 2 resistor ratio 0.19 0.21 0.24 fjv4106r switching application (bias resistor built in) ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor (r 1 =10k ? , r 2 =47k ? ) ? complement to fjv3106r equivalent circuit b e c r1 r2 r76 marking sot-23 1. base 2. emitter 3. collector 1 2 3
?2002 fairchild semiconductor corporation fjv4106r rev. a, july 2002 typical characteristics figure 1. dc current gain figure 2. input on voltage figure 3. input off voltage figure 4. power derating -0.1 -1 -10 -100 1 10 100 1000 v ce = - 5v r 1 = 10k r 2 = 47k h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.1 -1 -10 -100 v ce =- 0.3v r 1 = 10k r 2 = 47k v i (on)[v], input voltage i c [ma], collector current -0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 -1 -10 -100 -1k -10k v ce = - 5v r 1 = 10k r 2 = 47k i c [ a], collector current v i (off)[v], input off voltage 0 255075100125150175 0 50 100 150 200 250 300 350 400 p c [mw], power dissipation t a [ o c], ambient temperature package dimensions fjv4106r dimensions in millimeters rev. a, july 2002 ?2002 fairchild semiconductor corporation 0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ !"# ! $ % & '( ) * + ,-./ , 0 " " "! "# ! 1+# ! % ! 0 #23 #24 #25 ( ( + # 6% 6 7 ! 0!$ 8! # ! 0!, 8 0! ,! 0 +$! '! |
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